hal114 unipolar hall switch ic edition june 10, 1998 6251-456-1ds mic r onas interme t all m i c r o n a s
hal114 micronas intermetall 2 unipolar hall switch ic in cmos technology introduction the hal114 is a hall switch produced in cmos technol- ogy. the sensor includes a temperature-compensated hall plate, a schmitt trigger, and an open-drain output transistor (see fig. 2). the hal114 has a unipolar behavior: the output turns low with a magnetic south pole on the branded side of the package (see figures 3 and 4). the output turns high if the magnetic field is removed. the output signal re- mains high if the magnetic north pole approaches the branded side of the package. the sensor is designed for industrial and automotive ap- plications and operates with supply voltages from 4.5 v to 24 v in the ambient temperature range from 40 c up to 150 c. the hal114 is available in a smd-package (sot-89a) and in a leaded version (to-92ua). features: operates from 4.5 v to 24 v supply voltage overvoltage protection reverse-voltage protection at v dd -pin short-circuit protected open-drain output by thermal shutdown operates with magnetic fields from dc to 20 khz stable magnetic switching points over a wide supply voltage range the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the mag- netic switching points ideal sensor for contactless switches and speed mea- surement in hostile automotive and industrial environ- ments specifications switching type: unipolar output turns low with magnetic south pole on branded side of package output turns high if magnetic field is removed marking code type temperature range a e c hal114so, hal114ua 114a 114e 114c operating junction temperature range (t j ) a: t j = 40 c to +170 c e: t j = 40 c to +100 c c: t j = 0 c to +100 c the relationship between ambient temperature (t a ) and junction temperature (t j ) is explained on page 8. hall sensor package codes type: 114 halxxxpa-t temperature range: a, e, or c package: so for sot-89a, ua for to-92ua type: 114 package: to-92ua temperature range: t j = 40 c to +100 c example: hal114ua-e hall sensors are available in a wide variety of packaging versions and quantities. for more detailed information, please refer to the brochure: aordering codes for hall sensorso. solderability package sot-89a: according to iec68-2-58 package to-92ua: according to iec68-2-20 out gnd 3 2 1 v dd fig. 1: pin configuration
hal114 micronas intermetall 3 functional description the hal114 is a cmos integrated circuit with a switch- ing output in response to magnetic fields. it processes the ahall voltageo internally: the hall voltage is propor- tional to the magnetic flux component bz orthogonal to an integrated hall plate, in case an electric current is im- posed to the plate. the hal114 compares the hall volt- age with a predefined threshold and generates the out- put signal dependent of the direction of the magnetic field. a special circuit compensates for the temperature dependent effects of the ic, as well as the external mag- net. a built-in hysteresis eliminates possible oscillations of the output signal adjacent to its switching point so that aoutput bouncingo is avoided. the output is short-circuit protected by limiting high currents and by sensing ex- cess temperature. shunt protection devices clamp voltage peaks at the output-pin and v dd -pin together with external series resistors. reverse current is limited at the v dd -pin by an internal series resistor up to 15 v. no external reverse protection diode is needed at the v dd -pin for values ranging from 0 v to 15 v. temperature dependent bias hysteresis control comparator output v dd 1 out 3 hall plate g nd 2 fig. 2: hal114 block diagram hal114 short circuit & overvoltage protection reverse voltage & overvoltage protection dimensions of sensitive area 0.4 mm x 0.2 mm positions of sensitive area sot-89a to-92ua x = 0 0.2 x = 0 0.2 y = 0.98 0.2 y = 1.0 0.2 x is referenced to the center of the package outline dimensions 4.55 0.1 2.6 0.1 0.4 0.4 1.7 0.4 1.5 3.0 0.05 0.05 branded side spgs7001-6-a/2e sensitive area top view y 123 2 fig. 3: plastic small outline transistor package (sot-89a) weight approximately 0.04 g dimensions in mm 4 0.2 1.53 0.05 0.125 0.7 sensitive area 0.55 branded side 0.36 0.8 0.3 45 y 14.0 min. 3.1 1.27 1.27 2.54 123 0.5 0.42 fig. 4: plastic transistor single outline package (to-92ua) weight approximately 0.12 g dimensions in mm 1.5 0.05 4.06 0.1 2.03 3.05 0.1 0.48 spgs7002-6-a/1e
hal114 micronas intermetall 4 absolute maximum ratings symbol parameter pin no. min. max. unit v dd supply voltage 1 15 28 1) v v p test voltage for supply 1 24 2) v i dd reverse supply current 1 50 1) ma i ddz supply current through protection device 1 200 3) 200 3) ma v o output voltage 3 0.3 28 1) v i o continuous output on current 3 30 ma i omax peak output on current 3 250 3) ma i oz output current through protection device 3 200 3) 200 3) ma t s storage temperature range 65 150 c t j junction temperature range 40 40 150 170 4) c 1) as long as t j max is not exceeded 2) with a 220 w series resistance at pin 1 corresponding to test circuit 1 3) t < 2 ms 4) t < 1000h stresses beyond those listed in the aabsolute maximum ratingso may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the arecommended operating conditions/characteristicso of this specification is not implied. exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. recommended operating conditions symbol parameter pin no. min. typ. max. unit v dd supply voltage 1 4.5 24 v i o continuous output on current 3 0 20 ma r v series resistor 1 270 w electrical characteristics at t j = 40 c to +170 c , v dd = 4.5 v to 24 v, as not otherwise specified in test conditions typical characteristics for t j = 25 c and v dd = 12 v symbol parameter pin no. min. typ. max. unit test conditions v ol output voltage over temperature range 3 120 400 mv i ol = 12.5 ma v ol output voltage over temperature range 3 190 500 mv i ol = 20 ma i oh output leakage current 3 1 m a b < b off , v oh = 24 v, t j = 25 c
hal114 micronas intermetall 5 electrical characteristics , continued symbol parameter pin no. min. typ. max. unit test conditions i oh output leakage current over temperature range 3 10 m a b < b off v oh = 24 v, t j < 150 c i dd supply current 1 6 8.2 11 ma t j = 25 c i dd supply current over temperature range 1 3.9 8.2 12 ma t en(o) enable time of output after setting of v dd 3 6 10 m s v dd = 12 v t r output rise time 3 85 400 ns v dd = 12 v, rl = 820 ohm, cl = 20 pf t f output fall time 3 60 400 ns v dd = 12 v, rl = 820 ohm, cl = 20 pf r thjsb case sot-89a thermal resistance junction to substrate backside 150 200 k/w fiberglass substrate pad size see fig. 6 r thja case to-92ua thermal resistance junction to soldering point 150 200 k/w leads at ambient tempera- ture at a distance of 2 mm from case magnetic characteristics at t j = 40 c to +170 c, v dd = 4.5 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter 40 c 25 c 100 c 170 c unit min. typ. max. min. typ. max. min. typ. max. min. typ. max. on point b on 7.5 21.5 36.0 7.0 21.3 34.0 6.3 19.6 31.5 6.0 19.2 31.0 mt off point b off 4.3 17.4 33.2 4.0 17.6 31.2 3.6 16.1 28.9 3.6 15.8 28.8 mt hysteresis b hys 2.8 4.1 5.0 2.8 3.7 4.5 2.6 3.5 4.0 2.2 3.4 4.0 mt b off min b on max b hys output voltage fig. 5: definition of switching points and hysteresis b off b on 0 fig. 6: recommended pad size sot-89a dimensions in mm 5.0 2.0 2.0 1.0
hal114 micronas intermetall 6 0 5 10 15 20 25 30 50 0 50 100 150 200 b off mt t a b on b off b on v dd = 12 v c fig. 7: typical magnetic switching points versus temperature 0 5 10 15 20 25 30 0 5 10 15 20 25 30 mt v dd v b on b off fig. 8: typical magnetic switching points versus supply voltage t a = 40 c t a = 25 c t a = 150 c 0 5 10 15 20 25 30 345678 mt v dd v b on b off fig. 9: typical magnetic switching points versus supply voltage t a = 40 c t a = 25 c t a = 150 c 15 10 5 0 5 10 15 15 10 5 0 5 10 15 20 25 30 v ma v dd i dd fig. 10: typical supply current versus supply voltage t a = 40 c t a = 25 c t a = 150 c
hal114 micronas intermetall 7 0 2 4 6 8 10 12 02468 v ma v dd i dd fig. 11: typical supply current versus supply voltage t a = 40 c t a = 25 c t a = 150 c 0 2 4 6 8 10 12 50 0 50 100 150 200 c ma t a i dd v dd = 24 v v dd = 4.5 v fig. 12: typical supply current versus temperature 0 100 200 300 400 500 0 5 10 15 20 25 30 v mv v dd v ol i o = 12.5 ma fig. 13: typical output low voltage versus supply voltage t a = 40 c t a = 25 c t a = 150 c 0 100 200 300 400 500 50 0 50 100 150 200 mv t a v ol i o = 12.5 ma i o = 20 ma c v dd = 12 v fig. 14: typical output low voltage versus temperature
hal114 micronas intermetall 8 50 0 50 100 150 200 m a t a i oh c 10 0 10 1 10 2 10 3 10 4 10 1 10 2 v oh = 24 v v dd = 5 v fig. 15: typical output leakage current versus temperature application note for electromagnetic immunity, it is recommended to ap- ply a 330 pf minimum capacitor between v dd (pin 1) and ground (pin 2). for applications requiring robustness to conducted dis- turbances (transients), a 220 w series resistor to pin 1 and a 4.7 nf capacitor between v dd (pin1) and ground (pin 2) is recommended. the series resistor and the ca- pacitor should be placed as close as possible to the ic. out gnd 3 2 1v dd 4.7 nf v dd r v 220 w r l fig. 16: recommended application circuit ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient tem- perature t a ). t j = t a + d t at static conditions, the following equations are valid: for sot-89a: d t = i dd * v dd * r thjsb for to-92ua: d t = i dd * v dd * r thja for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the application. data sheet history 1. final data sheet: ahal114 unipolar hall switch ico, june 10, 1998, 6251-456-1ds. first release of the final data sheet. micronas intermetall gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@intermetall.de internet: http://www.intermetall.de printed in germany by systemdruck+verlags-gmbh, freiburg (06/98) order no. 6251-456-1ds all information and data contained in this data sheet are with- out any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery dates are ex- clusively subject to our respective order confirmation form; the same applies to orders based on development samples deliv- ered. by this publication, micronas intermetall gmbh does not assume responsibility for patent infringements or other rights of third parties which may result from its use. reprinting is generally permitted, indicating the source. how- ever, our prior consent must be obtained in all cases.
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